CeSi_2薄膜的离子束合成及其室温光致发光特性

THE FORMATION OF CeSi_2 FILM BY ION BEAM SYNTHESIS AND CHARACTERISTICS OF PL AT ROOM TEMPERATURE

将能量为45keV的Ce离子注入到Si单晶片中，研究硅化铈薄膜的离子束合成及其室温光致发光特性．透射电镜观察表明在单晶硅的表面形成厚100nm的Ce离子注入层，选区电子衍射和X射线衍射分析表明注入层内形成了CeSi2．CeSi2的结晶程度随注入剂量的增加而逐渐完整．用远紫外光激发得到了室温蓝紫色PL谱．以红光（650～700nm）激发，则上转换蓝光和紫光发射的效率较高，其发光特性比较稳定．蓝光和紫光受激发射峰的强度随注入剂量的增加而迅速增加．

The formation of silicide, induced by 45keV Ce ion implantation using metal vapor vacuum arc (MEVVA) technique on Si substrates, has been investigated simultaneously. HRTEM analysis shows that the thickness of Ce ion implanted layer on the Si wafer is about 100 um. The CeSi2 compounds were formed directly with ion implantation, and the crystalline of CeSi2 compounds is gradually complete with increasing ion dose during ion beam synthesis. The CeSi2 films with (200)crystal orientation are formed after high dose irradiation. The blue-violet PL spectrum excited with ultra-violet ray is obtained at room temperature, The intensity of PL spectrum decreases with the increasing of the excited wavelength between 220 um and 300 um. The intensity of PL spectrum increases with increasing of the excited wavelength between 600 um and 700 um. The CeSi2 films present very large coefficiency of up conversion in the red to blue-violet.