摘要
计算了ＺｎＳ中电子谷间散射的速率．利用蒙特卡罗方法，研究了ＺｎＳ型薄膜电致发光器件中电子的能谷转移过程．得出了能谷转移的瞬态过程，电场对谷间分布的影响以及不同能谷中电子动能分布的特点．提出了高能谷的能量存储效应．这些结果可作为研究电致发光过程的基本数据．
Abstract Based on the calculation about intervalley scattering rates in ZnS,
intervalley transfer process in ZnS type thin film electroluminescent devices is investigated
through Monte Carlo simulation. The transient process of intervalley transfer, the influence of
electric field on intervalley distribution and the electron kinetic energy distributions in different
valleys are obtained. We propose that high valley could store energy. These results could be
used as the basic data on the study of electroluminescent process.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1999年第3期533-538,共6页
Acta Physica Sinica
基金
国家高技术研究发展计划
高等学校博士学科点专项基金
