激光直接写入过程的计算机仿真研究

Computer Simulation Studies of Laser Direct Writing Process

基于光刻胶正胶曝光显影过程的理论模型，用梯度折射率介质光线追迹的方法进行了由于局部溶解速率不同而造成的显影过程中胶面面形随时间变化过程的计算。对任意给定的曝光量分布及显影时间，可以精确地确定显影后的面形，为激光直写研究提供了一种有效的工具。同时，通过对显影速率作阈值近似后，导出了光刻胶曝光显影后面形与表面所需曝光量分布之间的关系，为激光直接写入提供了理论指导。

Based on the theoretical process model for positive photoresist, ray tracing algorithm is used to calculate the time evolution of surface profiles produced by a locally dependent surface etching phenomenon. Depending on the simulation programs established, the final developed surface profile can be computed from any given distribution of exposure energy and development time. This provides a convenient way for investigating laser direct writing process. By introducing a threshold approximation in development process, the relationship between the initial distribution of exposure energy on the upper surface of the resist film and the surface profile after development is deduced, which provides an effective theoretical approach for laser direct writing technology.