期刊文献+

空间热梯度辅助的热调制反射光谱 被引量:4

THERMO MODULATION REFLECTANCE SPECTRA ASSISTED BY THE SPACE THERMAL GRADIENT
下载PDF
导出
摘要 给出一种新的通过空间热梯度辅助的热调制反射光谱方法,其关键是在空间光谱方法基础上加一热场梯度,无需对材料进行通常空间调制方法的特殊处理.将该方法应用于典型半导体材料GaAs,清晰地观察到GaAs材料的带间跃迁E0和其它诸如E0+Δ0、E1、E1+Δ1的高能带跃迁. A new method of thermo modulation reflectance spectrum assisted by space thermal gradient was proposed. The key is to apply a thermal gradient to the usual space modulation spectral method, so that the special sample treatment was avoided. This method was used to study the typical semiconductor GaAs. The interband transition of E 0 , and higher energy transition of E 0+Δ 0,E 1,E 1+Δ 1 in the crystal of GaAs were observed clearly.
出处 《红外与毫米波学报》 SCIE EI CAS CSCD 北大核心 1999年第1期93-96,共4页 Journal of Infrared and Millimeter Waves
基金 国家自然科学基金 上海市启明星计划
关键词 热调制反射光谱 空间微分 反射谱 热梯度 砷化镓 thermo modulation reflection spectrum, space differential reflectance spectrum, thermal gradient.
  • 相关文献

同被引文献14

  • 1雷红兵,周必忠,陈张海,唐文国.稀土(Er)与氧(O)共掺GaAs(Er,O)的红外吸收谱研究[J].红外与毫米波学报,1997,16(1):56-60. 被引量:1
  • 2Nahory R E, Shay J L. Reflectance modulation by the surface field in GaAs[J]. Phys. Rev. Lett. ,1968,21(23): 1569 - 1571.
  • 3Mendez E E, Chang L L, Landgren G, et al. Observation of superlattice effects on the electronic bands of multilayer heterostructures[ J]. Phys. Rev. Lett. , 1981,46 ( 18 ) : 1230 - 1234.
  • 4Chernikov M A, Ryabushkin O A. Microwave modulated light reflection in semiconductors [ J ]. Technical Physics Letters ,2001,27(12) : 1038 - 1040.
  • 5Glembocki O J, Shanabrook B V, Photoreflectance spectros- copy of microstructures, in semiconductors and semimetals [ M ] Academic Press, New York, 1992:221 - 292.
  • 6Luo H H, Qian X, Gu X F, et al. Effect of Ka-band microwave on the spin dynamics of electrons in a GaAs/Al0.35 Ga0.65As heterostructure [ J ]. Appl. Phys. Lett. , 2009,94 (19) :192107.
  • 7Stern F. Dispersion of the index of refraction near the absorption edge of semiconductors [ J ]. Phys. Rev. A, 1964, 133(6A), 1653 - 1664.
  • 8Varshni Y P. Temperature dependence of the energy gap in semiconductors [ J ]. Physica, 1967,34 : 149 - 154.
  • 9Bennett B R, Soref R A, Del Alamo J A. Cartier-induced change in refractive index of InP, GaAs, and InGaAsP[ J]. IEEE J. Quantum Electron. ,1990,26( 1 ) :113 - 122.
  • 10Nilsson N G, Empirical approximations for the Fermi energy in a semiconductor with parabolic bands [ J ]. Appl. Phys. Lett. , 1978,33 (7) : 653 - 654.

引证文献4

二级引证文献6

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部