摘要
用高温高压苯热合成方法制备了GaP纳米晶,用X射线衍射、光吸收谱及透射电子显微镜对所得样品进行了分析测试.结果表明,GaP纳米晶在苯热条件下是亚稳定态的,反应时间过长及反应温度过高均不利于它的生成和生长.文中还讨论了晶粒度分布与合成条件间的关系,并进行了理论上的定性分析.
GaP nanocrystals were synthesized by high temperature high pressure beuzene ther-inal synthesis method, the samples were charartrized by X-ray cliffraction,optical absorption and transmission election microscope. The results showed that GaP nanocrystals were metastable un-der benzene thermaJ conditions. The relationship between the size distriblltion and the synthesis conditiolis was also investigated iu this paper.
出处
《物理化学学报》
SCIE
CAS
CSCD
北大核心
1999年第2期105-109,共5页
Acta Physico-Chimica Sinica
关键词
GAP
纳米晶
苯热合成
半导体
磷化镓
GaP nanocrystals, Benzcne thermal synthesis, Optical absorption