掺Ti和未掺Ti的α-Fe_2O_3薄膜光电性质的研究

The Studies on the photoelectric properties of the Ti-doped and undoped hematite films

本文采用旋涂法制备了掺Ti和未掺Ti的Fe2O3薄膜,并对其薄膜的结构和光电特性进行了系统测试分析。XRD结果证实掺Ti和未掺Ti的薄膜均为α-Fe2O3。SEM测试表明α-Fe2O3薄膜微观结构为纳米线结构,具有沟壑结构,粒径长度约为150nm,掺杂Ti使薄膜更均匀致密,晶体颗粒更小,比表面积更大。紫外-可见光谱实验发现了掺杂Ti使薄膜产生"蓝移",禁带宽度大,验证了SEM测试结果。IPCE实验结果结果说明了掺杂Ti的α-Fe2O3薄膜的光电性能大大好于未掺杂的薄膜。

The Ti doped and undoped hematite（α-Fe2O3） thin films were prepared by sol-gol spin-coating method in this article,the crystal structure and photoelectric properties were systematically studied.The XRD analysis showed that both the Ti doped and undoped films are hematite.The results of SEM test indicated that the nanostructures of films were gully nanowires with about 150nm long.The Ti Dopedα-Fe2O3 films were more uniform and dense with much larger surface,and the photocurrents in IPCE measurements were much higher than the undoped ones.There was an observation of the ＂blue shift＂ for absorption from the UV-vis spectroscopy too.The Ti dopedα-Fe2O3 films had better photoelectric properties than the undoped ones.Further experiments are under the way.