Analytical Modeling of Quantum Mechanical Tunneling in Germanium Nano-MOSFETS
Analytical Modeling of Quantum Mechanical Tunneling in Germanium Nano-MOSFETS
摘要
A simple analytical model has been developed to study quantum mechanical effects （QME） in a germanium substrate MOSFET （metal oxide semiconductor field effect transistor）, which includes gate oxide tunneling considering the energy quantization effects in the substrate. Some alternate high dielectric constant materials to reduce the tunneling have also been studied. By comparing with the numerically reported results, the results match well with the existing reported work.
A simple analytical model has been developed to study quantum mechanical effects （QME） in a germanium substrate MOSFET （metal oxide semiconductor field effect transistor）, which includes gate oxide tunneling considering the energy quantization effects in the substrate. Some alternate high dielectric constant materials to reduce the tunneling have also been studied. By comparing with the numerically reported results, the results match well with the existing reported work.
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