一种基于非线性补偿技术的混合模式65nmCMOS带隙基准源

A nonlinearity correction based mixed mode bandgap reference in 65nm CMOS

通过对当前已有的两种低温漂带隙电压源进行分析和总结，提出了一种新型温度补偿技术。采用双端分段非线性补偿、对数项消除技术以及混合模式拓扑输出方式，设计了一种具有高温度稳定性的带隙电压基准源。整个电路基于65rimCMOS工艺实现，并成功应用于一种65nmCMOS触摸屏控制器中。当电源电压为2．5V时，带隙电压源的输出为949mV。当温度在-40℃-125℃范围变化时，输出电压仅变化0．44mV，温度系数约为2．87ppm／℃，非常符合高精度SoC的应用。

Through the review and analysis of two recently reported low temperature coefficient bandgap voltage references, a novel temperature compensation technique is proposed in this paper. With the double-end piecewise nonlinearity correction method, logarithm cancellation technique and the mixed mode output, a bandgap reference （BGR） with high temperature stability is realized based on 65nm CMOS process. This voltage reference has been used in a 65nm CMOS touch screen controller （TSC） and produces an output voltage of about 949mV with 2.5V supply voltage. The output voltage varies by only 0.44mV from -40℃ to 125℃, and the temperature coefficient is less than 2.87ppm/℃. The design results show that this BGR is very suitable for high precision SoC applications.