环栅结构CMOS/SOI器件SPICE模型研究

SPICE Modeling of CMOS/SOI with Gate-Enclosed Layout

建立了环栅结构的CMOS/SOI器件的SPICE模型,可以对抗辐照设计中环栅结构的CMOS/SOI器件计算其等效宽长比,将环栅器件转换为等效宽度和长度的条栅器件;以及对体接触电阻等其他受影响的SPICE模型参数做出调整,使其电学特性模拟达到最准确精度。模拟数据和试验数据具有很好的一致性,证明所建立的模型具有较高的精度。

A new accurate SPICE model for CMOS/SOI transistors with gate-enclosed layout is described which can evaluate the aspect ratio of CMOS/SOI for selected gate-enclosed shapes,and turn it into an equivalent standard rectangular FET.The body contact resistance and other parameters are also accurately modeled.A comparison of the theoretical and experimental results is made which shows the adjusted model simulated result is predictions agree well with measured characteristics devices.