溅射参数对CuInGa预制膜成分和结构的影响

Influences of Sputtering Parameters on the Composition and Microstructure of CuInGa Precursors

作为CIGSe太阳能电池重要组成部分的CIGSe吸收层可以采用预制膜+硒化两步法制备。文中采用磁控溅射方法制备了成分均匀、具有一定成分比例的CuIn、CuGa、CuInGa预制膜。X射线荧光分析(XRF)结果显示随着溅射电流的增加,CuIn预制膜的Cu/In原子比减小,CuGa预制膜的Cu/Ga原子比保持不变;X射线衍射分析(XRD)结果表明CuIn、CuInGa预制膜主要由Cu2In、CuIn、In相组成,Ga元素以固溶的形式存在于CuInGa预制膜中。对于CuIn预制膜,随着溅射电流的增加,薄膜中的Cu2In相逐渐向CuIn转变。

As the crucial part of CIGSe solar cell,CIGSe absorber can be prepared by an approach which can be called two-step process combining precursor deposition and selenization.In this work,CuIn,CuGa and CuInGa precursors with uniform compositions and certain atomic ratios were prepared by magnetron sputtering.XRF results show that the atomic ratios of Cu/In in CuIn films decrease with the increasing of sputtering current while the atomic ratios of Cu/Ga keep constant.XRD results show CuIn and CuInGa precursors mainly consist of Cu2In CuIn and In phases,while Ga exists in CuInGa films in the form of solid-solution.For CuIn precursors the peaks of CuIn phase appear as the sputtering current increases,which indicate that CuIn phase is formed originating from Cu2In.