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光路可调的红外透射方法检测键合质量 被引量:1

Test of bonding quality by means of adjustable infrared transmission
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摘要 基于红外透射原理,采用调节光路的冷光源方法搭建了晶片键合界面的质量检测系统。利用该系统可以很好的实现GaAs,InP材料的键合界面检测和刀片分离时的在线监测,同时本文以GaAs基分布布拉格反射镜(DBR)和InP基有源区键合为例,结合红外透视图像和薄膜转移照片分析,对键合表面处理方法进行了优化选择。试验表明该检测系统数据可靠,使用方便,为晶片键合条件及参数优化提供了实用平台。 Based on Infrared transmission theory, quality test system for wafer bonded interface was set up using optical method with cold light source. With this system, quality of bonded interface for materials of GaAs and InP could be judged. This system also offered a real-time inspection for the blade insertion test. Meanwhile, optimal surface treatment method is selected by infrared transmission and film transferring pictures for bonding of GaAs-based distributed Bragg reflector (DBR) and InP-based active region. The infrared transmission system is believed to be an excellent platform for judgment and select of bonded sample, effectively decreasing experimental period and cost. It also offers reliable experiment data for optimization and analysis of wafer bonding parameters.
出处 《激光与红外》 CAS CSCD 北大核心 2010年第6期644-647,共4页 Laser & Infrared
基金 国家自然科学基金项目(No.60837001) 国家高技术研究发展计划项目(No.2007AA03Z410) 深圳信息学院青年自然科学基金项目(No.QN-08011)资助
关键词 键合 红外透射 布拉格反射镜(DBR) bonding infrared transmission distributed Bragg reflector (DBR)
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参考文献8

  • 1Estrada S, Huntington A, Stonas A, et al. n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor waferfused at tto-750 ℃ [ J ]. Applied Physics Letters, 2003, 83(3) :560 -562.
  • 2Yamamoto N, Noda S, Chutinan A. Development of one period of a three-dimensional photonic crystal in the 5 - 10μm wavelength region by wafer fusion and laser beam diffraction pattern observation techniques [ J ]. Jpn. J. Appl. Phys, 1998,37 :L1052 -L1054.
  • 3Jayaraman V, Mehta M, Jackson A W, et al. High-power 1320 nm wafer-bonded VCSELs with tunnel junctions [ J]. IEEE Photonics Technology Letters, 2003,15 ( 11 ) : 1495 - 1497.
  • 4Liu Y. Heterogeneous integration of OE arrays with Si electronics and microoptics [ J ]. IEEE Transactions on Advanced Packaging,2002,25 ( 1 ) :43 - 49.
  • 5何国荣,郑婉华,渠红伟,杨国华,王青,吴旭明,曹玉莲,陈良惠.键合方法制备长波长面发射的实验和分析[J].Journal of Semiconductors,2007,28(3):444-447. 被引量:5
  • 6Tong Q Y, Gosele U. Semiconductor wafer bonding science and technology [ M ]. New York: Wiley-Interscience, 1999:36 - 37.
  • 7Tsai C S, Wang S K, Lee C C. Visualization of solid mate- rial joints using a transmission-type scanning acoustic microscope[ J]. Appl Phys Lett, 1997,31 (5) :317 - 20.
  • 8Okuno Y, Uomi K,Aoki M, et al. Direct wafer bonding of m v compound semiconductor for free-material and free- orientation integration [ J ]. IEEE Journal of Quantum Electronics, 1997,33 (6) : 959 - 969.

二级参考文献7

  • 1Karim A,Djorlin S,Piprek J,et al.Long-wavelength verticalcavity lasers and amplifiers.IEEE J Sel Topics Quantum Electron,2000,6 (6):1244
  • 2Qian Y,Zhu Z H,Lo Y H,et al.1.3-μm vertical-cavity surface-emitting lasers with double-bonded GaAs-AlAs Bragg mirrors.IEEE Photonics Technol Lett,1997,9(1):8
  • 3Karim A,Black K A,Lofgreen D,et al.Superlattice barrier1528-nm vertical-cavity laser with 85℃ continuous-wave operation.IEEE Photonics Technol Lett,2000,12 (11):1438
  • 4Jayaraman V,Mehta M,Jackson A W.High-power 1320 wafer-bonded VCSELs with tunnel junctions.IEEE Photonics Technol Lett,2003,15(11):1495
  • 5Wada H,Ogawa Y,Kamijoh T.Electrical characteristics of directly-bonded GaAs and InP.Appl Phys Lett,1993,62(7):738
  • 6Horng R H,Peng W C,Wuu D S,et al.Surface treatment and electrical properties of directly wafer-bonded InP epilayer on GaAs substrate.Solid-State Electron,2002,46:1103
  • 7Lam L M,Kwong C W,Ho H P,et al.Plasma immersion Ar^+ ion implantation induced disorder in strained InGaAsP multiple quantum wells.Electron Lett,1998,34(8):817

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