基于SGOI和CESL结构的新型应变硅NMOSFET的有限元研究

Finite Element Study of Novel Strained-Si NMOSFET with SGOI and CESL Structures

应变硅技术通过在沟道区引入适当的应变,达到提高载流子迁移率、改善MOS器件性能的目的。利用有限元法,研究了一种基于SGOI与氮化硅CESL应变结构的新型应变硅NMOS-FET。结果表明,与采用单一的SGOI或CESL结构相比,两者共同作用下的新结构能更有效地提高沟道应变。增加氮化硅薄膜的本征应力、减小应变硅层厚度、适当提高锗组分,均能有效增加硅沟道区的应变量。采用有限元分析进行的模拟研究,可弥补实验测量的不足,为纳米级应变硅器件的设计和制造提供参考。

Strained silicon technology can increase carrier mobility and thus improve the performance of MOS devices by introducing appropriate strain into the channel.A novel strained silicon NMOSFET based on SGOI and silicon nitride CESL structures was studied by finite element analysis.Results indicated that,compared to single structure of SGOI or CESL,the channel strain can be more effectively controlled by combination of the two structures.Channel strain can be effectively enhanced by either increasing intrinsic stress in silicon nitride film,reducing thickness of the strained Si layer,or raising molar fraction of Ge.Simulation results can provide a supplement to experimental measurements,as well as a useful reference for design and fabrication of similar strained-Si nano devices.