光致发光PL技术在硅块检测中的应用

Photo luminescence imaging on silicon bricks

光致发光影像PL Imaging技术应用在硅块检测方面已经开发出来,这项技术可以把掺硼铸锭硅块以高解析度,在极短时间内量测得到每一面的PL Imaging影像。这些影像按照体少子寿命(τbulk)变化进行分析,并且针对类稳态光导(QSSPC)及微波光导量测技术(μ-PCD)进行比较,证明可以作为硅块分析工具。我们证明在辐照均匀下的量测结果不仅符合光伏产业的一个太阳(One Sun)辐照条件,当量测结果具备平均注入条件,更得到一致体少子寿命值测试结果。

Photoluminescence imaging on silicon bricks prior to wafer sawing is explored. It is shown that photoluminescence images can be measured on the side facets of cast Boron doped bricks with high spatial resolution and short measurement times. These images are analysed in terms of variations of the bulk lifetime and compared to quasi steady state photoconductance and microwave photoconductance decay measurements. It is shown that typical experimental conditions for photoluminescence imaging are well suited for the analysis of bulk lifetimes in silicon bricks since data can be measured with homogeneous one Sun equivalent illumination intensity and reported for an average injection level that is not only representative of the operating conditions of a typical industrial solar cell but also almost independent of variations in the lifetime.