Ar离子溅射诱导硅纳米圆锥阵列的场发射性能

Field Emission of Silicon Nanocone Arrays Induced by Ar Ion Sputtering

利用碳薄膜作为模板,采用能量1.2keV的Ar离子束室温溅射的方法制备了大面积高密度的硅纳米圆锥。硅纳米圆锥的密度约为(1—2)×109/cm2。场发射性能测量结果表明硅纳米圆锥阵列的场发射性能和碳纳米纤维的场发射性能相当,比已经报道的硅纳米圆锥的场发射性能更好。

The silicon nanocones with large area and high density were fabricated by Ar ion sputtering with energy of 1.2 keV at room temperature and using the carbon film as masks. The density of silicon nanocones was～（1-2）×109/cm2. The field emission properties of silicon nanocones are corresponded with that of carbon nanofibers,and are better than that of silicon nanocones fabricated by other methods.