硅单晶研磨片残留损伤吸杂的研究

Study of Gettering by Residual Damage on Polished Single Crystal Silicon Wafers

研究了一种新的外吸杂方法,它不需要在硅片加工过程中特意引入另外的外吸杂工序,而是通过控制腐蚀工艺条件,将硅片正常研磨加工中形成的损伤层保留一定的厚度,从而使硅片具有外吸杂能力。

A new gettering process is developed, which does not require the special processing step for gettering normally required. It achieves the gettering effect through the control of the corrosion conditions and the retaining of a damaged layer formed during the polishing of the wafers.