VLS机制生长SiC晶须研究

Synthesis of SiC Whiskers by Chemical Vapor Deposition

采用化学气相沉积方法,以Ni薄膜为催化剂,CH_4、SiH_4为反应气体,H_2为载气,成功地在Si基片上生长出β-SiC晶须。运用X射线衍射和扫描电子显微镜系统地研究了不同催化剂厚度对SiC晶须形貌、结构和化学成分的影响。

β-SIC whiskers grown on the Si substrate are prepared by chemical vapor deposition with Ni film as catalyst,CH4 ,Sill4 as the reactive gas, H2 as carrier gas. The effects of catalyst thickness on the SiC whisker morphology, structure and chemical composition are studied using X-ray diffraction and scanning electron microscope.