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磁控溅射镍膜催化生长石墨烯及迁移表征 被引量：2

Catalytic Growth on Nickel Films by Magnetron Sputtering,Transferring and Characterization of Graphene
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摘要 在Si/SiO_2衬底上将磁控溅射镍膜作为催化剂,利用化学气相沉积制备了大面积连续的石墨烯薄膜,得到的石墨烯为1～15层。将石墨烯薄膜迁移到玻璃衬底和Si/SiO_2衬底上,测量了薄膜的可见光透过率和薄膜电阻,并讨论了石墨烯作为透明导电电极在光电器件上的应用。 On the Si/SiO2 substrate, large area and continuous graphene films are prepared by chemical vapor deposition method, using nickel film by magnetron sputtering as catalyst. The layer numbers of graphene range from 1 to 15. By transferring these graphene films to glass and Si/SiO2 substrates. The transmittance and sheet resistance are measured. In addition, the application of graphene as transparent conductive electrode in opto-electronic device is discussed.
作者 牛亮 张国玉 刘立伟
机构地区 长春理工大学光电工程学院 中国科学院苏州纳米技术与纳米仿生研究所
出处 《材料导报（纳米与新材料专辑）》 EI 2010年第1期94-96,共3页
基金 国家自然科学基金(08BM011001)
关键词 磁控溅射 石墨烯 化学气相沉积 镍催化剂 magnetron sputtering, graphene, chemical vapor deposition, nickel catalyst
分类号 TQ127.11 [化学工程—无机化工]
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参考文献9

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同被引文献58

  • 1梁戈,郑彬娜,蒋百灵,李玉庆.磁控溅射离子镀基体偏压对类石墨碳膜组织形貌及性能的影响[J].兵器材料科学与工程,2007,30(4):13-16. 被引量：9
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  • 3Geim A K,Novoselov K S. The rise of graphenc[J]. Nature Mater,2007,6 : 183 - 191.
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  • 5Balandin A A,Ghosh S,Bao W Z,et al. Superior thermal conductivity of single-layer graphene [ J ]. Nano Lett, 2008,8:902 - 907.
  • 6Chert J H,Jang C,Xiao S D,et al. Intrinsie and extrinsic performance limits of graphene devices on SiO2 [ J ]. Nat Nanoteehno1,2008 ,3 :206 - 209.
  • 7Chae H K, Siberio-P3rez D Y, Kim J. A route to high surface area, porosity and inclusion of large molecules in crystals[ J]. Nature ,2004,427:523 - 527.
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引证文献2

二级引证文献38

材料导报（纳米与新材料专辑）
2010年 第1期

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