摘要
主要介绍了AlN基稀磁半导体(DMS)的研究进展,包括其发展过程、AlN基DMS的研究现状,描述了理想的AlN基DMS材料应具备的特征,并展望了其未来的研究方向。
The recent progress of AlN-based diluted magnetic semiconductor is mainly reviewed, including the developing course of DMS and recent research of AlN-based DMS. An outlook on ideal diluted magnetic semiconductors are also concluded and its future is looked ahead.
关键词
ALN
稀磁半导体
居里温度
掺杂
过渡元素
AlN, diluted magnetic semiconductor, Curie temperature, doping, transition elements