Ta掺杂对Na_(0.5)Bi_(0.5)TiO_3-0.02NaNbO_3压电、介电性能的影响

Effect of Ta on Piezoelectric and Dielectric Properties of Na_(0.5) Bi_(0.5) TiO_3-0.02NaNbO_3

在制备无铅压电陶瓷的前沿探索中首次研究了Ta掺杂对Na0．5Bi0．5TiO3-0．02NaNbO3。系压电陶瓷的压电、介电性能的影响。研究表明，掺杂适量的Ta有利于提高其性能。当Ta掺杂量为0．4mol时，压电常数d3s达到最大值114pC／N；相对介电常数ε33^T／ε0、机电耦合系数kp也达到最大值431和0．184；而介电损耗tgδ随Ta含量的增加变化不大。

The piezoelectric and dielectric properties of Na0.5Bi0.5TiO3-0.02NaNbO3 binary system piezoelectric ceramics with Ta-doped are studied in the forefront of preparation of lead-free piezoelectric ceramic. The resut shows that the amount of doped Ta in the ceramics has great influence on properties. When the doping of Ta reaches 0. 4mol,piezoeleetric properties, dielectric properties and coupling factor reach the maximum value of 114pC/N, 431 and 0. 184;the corresponding dielectric loss has no more change with increasing Ta doping.