摘要
采用电泳沉积法在石墨基体上制备厚度可控的Si涂层,考察了电泳沉积参数(电压、沉积时间、固含量及添加剂量)对涂层沉积量的影响。所制备的Si涂层通过烧结与石墨基体发生在位反应形成SiC涂层。用SEM观察涂层烧结前后的形貌,发现烧结后Si渗入基体内部。孔径分布数据表明所形成的SiC涂层导致石墨孔径变小。实验提供了一种制备SiC涂层的新方法,电泳沉积-烧结可用于C/SiC复合材料的制备。
Thickness controllable Si coating is got on graphite substrate by electrophoretic deposition（EPD）. The effect of EPD parameters （given voltage, deposition time, additive volume, solid content） on deposit quantity of nano-Si is obtained. SiC coating is formed by in-situ reaction which occurs between Si coating and graphite substrate in sintering progress. The surface morphologies of coating before and after sintering are observed by SEM, the result indicates that Si infiltrates into the graphite substrate. Graphite with SiC coating owns smaller pore size. A novel method of fabrication SiC coating is present by this work, and C/SiC composites can prepared by EPD and sintering.
关键词
电泳沉积
烧结
SIC
涂层
electrophoretic deposition, sintering, silicon carbide, coating
