Power Conversion Efficiency of Schottky Diode Fabricated on AIGaAs/GaAs Heterostructure
Power Conversion Efficiency of Schottky Diode Fabricated on AIGaAs/GaAs Heterostructure
出处
《材料科学与工程（中英文版）》
2010年第6期60-65,共6页
Journal of Materials Science and Engineering
参考文献15
-
1W. Schilpzand, V.H. Christian, RFID as the key to the ubiquitous network society, A Japanese Case Study on Identity Management (2008) 3.
-
2H. Hasegawa, S. Kasai, III-V compound semiconductor nanotechnology for smart systems, in International Conference on MEMS, NANO and Smart Systems (2005).
-
3T. Sato, I .Tamai, H. Hasegawa, Growth kinetics and theoretical modeling of selective molecular beam epitaxy for growth of GaAs nanowires on nonplanar (001) and (111) substrates, Journal of Vacuum Science & Technology 23 (2003) 1706-1713.
-
4Y.H. Suh, K.A. Chang, High-efficiency dual-frequency rectenna for 2.45- and 5.8-GHz wireless power transmission, IEEE Trans. on Microwave Theory and Tech. 50 (2002) 1784-1789.
-
5Y.J. Rien, K. Chang, 5.8 GHz circularly polarized dual-diode rectenna and rectenna array for microwave power transmission, IEEE Trans. Microwave Theory and Tech. 54 (2006) 1495-1502.
-
6C.P. Wen, Coplanar waveguide: A surface strip transmission line suitable for nonreciprocal gryromagnetic device applications. IEEE Trans, Microwave Theory Tech MTT-17 (1969) 1087-1088.
-
7F. Mustafa, A.M. Hashim, N. Parimon, S.F.A. Rahman, M.N. Osman and A.R.A. Rahman, RF characteristics of planar dipole antenna for direct integration with AIGaAs/GaAs Schottky diode, Inter. Syrup. on Antennas and Prop. (2009).
-
8B.L. Sharma, Metal-semiconductor Schottky barrier junctions and their applications, Plenum Press, New York and London, 1984, p. 20.
-
9F. Mustafa, N. Parimon, A.M. Hashim, S.F.A. Rahman, A.R.A. Rahman, M.N. Osman, Design, fabrication and characterization of a Schottky diode on an AIGaAs/GaAs HEMT structure for on-chip RF power detection, Superlattice and Microstructure 47(2010) 274-287.
-
10W. Jeon, T.M. Firestone, J.C. Rodgers, J. Melngailis, Design and fabrication of Schottky diode on chip RF power detector, Solid State Electronics (2004) 2089-2093.
-
1张允强,高翔,彭正夫,孙娟,蒋树声,章灵军.分子束外延生长Al_xGa_(1-x)As/GaAs超晶格及结构、光学特性研究[J].固体电子学研究与进展,1993,13(1):30-34.
-
2刘红侠,吴笑峰,胡仕刚,石立春.Characteristics and parameter extraction for NiGe/n-type Ge Schottky diode with variable annealing temperatures[J].Chinese Physics B,2010,19(5):530-535.
-
3陈丰平,张玉明,吕红亮,张义门,郭辉,郭鑫.Fabrication and characteristics of a 4H-SiC junction barrier Schottky diode[J].Journal of Semiconductors,2011,32(6):33-35. 被引量：2
-
4陈丰平,张玉明,吕红亮,张义门,黄建华.Study of 4H-SiC junction barrier Schottky diode using field guard ring termination[J].Chinese Physics B,2010,19(9):515-518. 被引量：1
-
5牛萍娟,刘宏伟,郭维廉,李晓云.器件模拟对AlGaAs/GaAs RTD的特性分析(英文)[J].微纳电子技术,2004,41(10):15-17.
-
6Ling Wang Xiao-Hong Tang Fei Xiao Shang-Yun Wu.A Fast-Speed Pulse Detector Based on N-Type Si-Schottky Diode via Tuning Circuit[J].Journal of Electronic Science and Technology,2010,8(3):257-261.
-
7孙旭光,张春,高立力,李永明,王志华.Modeling of a Schottky Diode in CMOS Process with a Flexible “Open-Through” On-Chip De-embedding Method[J].Tsinghua Science and Technology,2011,16(2):175-180. 被引量：1
-
8翟东媛,朱俊,赵毅,蔡银飞,施毅,郑有炓.High performance trench MOS barrier Schottky diode with high-k gate oxide[J].Chinese Physics B,2015,24(7):426-428. 被引量：2
-
9黄健华,吕红亮,张玉明,张义门,汤晓燕,陈丰平,宋庆文.Simulation study of a mixed terminal structure for 4H-SiC merged PiN/Schottky diode[J].Chinese Physics B,2011,20(11):530-533. 被引量：1
-
10闻孺铭,孙浩,滕腾,李凌云,孙晓玮.An InP-based heterodimensional Schottky diode for terahertz detection[J].Journal of Semiconductors,2012,33(10):29-32.
