摘要
采用射频磁控溅射方法,在石英衬底上制备Mg掺杂的CuCrO2薄膜。通过XRD、紫外吸收光谱及电学性能的测量表征该系列薄膜样品的结构与光电性能。结果表明:退火处理后所有薄膜样品的结晶性良好,均为3R型铜铁矿结构;薄膜的电导率随掺杂量的增加而增大。当x=0.09时,样品的室温电导率可达6.16×10-2S/cm,比未掺杂的CuCrO2提高近400倍,且霍耳测试表明所制备的薄膜为p型导电体。电导率随温度变化关系表明:薄膜样品在200～300K的温度范围内均很好地符合Arrhenius热激活规律;当x=0.09时,最低激活能仅为0.034eV。薄膜的可见光透过率与光学带隙宽度均随掺杂量的增加而减小。
A series of CuCr1-xMgxO2（0≤x≤0.09） thin films were deposited on quartz substrates using radio frequency magnetron sputtering.The structures,optical and electrical properties of CuCr0.91Mg0.09O2 thin films were investigated by diffractometry,double-beam spectrophotometry,electrical property measurement,respectively.XRD pattern indicates that all films are of 3R polycrystalline delafossite phase with good crystallinity after annealing.The conductivity of film has a notable improvement with increasing Mg.The conductivity at room temperature is 6.16×10-2 S/cm for x=0.09 which is nearly 400 times higher than that undoped CuCrO2 film.The p-type nature of films is confirmed by Hall measurements.The temperature dependence of electrical conductivity agrees well with the Arrhenius rule in the range of 200-300 K for all samples,and the minimum activation energy is 0.034 eV with x=0.09.Both average transmittance and optical band gap of CuCr1-xMgxO2 films decrease with the increase of Mg concentration.
出处
《中国有色金属学报》
EI
CAS
CSCD
北大核心
2010年第5期898-902,共5页
The Chinese Journal of Nonferrous Metals
基金
北京市教育委员会科技计划资助项目(KM200910005023)
