摘要
采用微波水热辅助电沉积法在ITO导电玻璃表面制备了形貌均匀具有纳米棒、纳米板状结构的Bi2S3薄膜。利用XRD、XPS、场发射扫描显微镜(FESEM)、TEM和UV-Vis-NearIR对薄膜的结构、形貌、光学性能进行了表征。结果显示微波水热辅助电沉积法制备的Bi2S3薄膜具有良好的结晶性能;随着微波水热温度的提高,所制备Bi2S3薄膜的结晶性能先增强后降低,合适的温度是130℃。与电沉积法制得薄膜相比,采用微波水热辅助电沉积法制得Bi2S3薄膜的禁带宽度由1.44eV增加到1.84eV。
Uniform nanorod and nanoplate structured Bi2S3 thin films were prepared on ITO substrates using a microwave-hydrothermal assisted electrodeposition method. The phase compositions, morphologies and optical properties of the as-deposited thin films were characterized by XRD, XPS, Field emission scanning electron microscope （FESEM）, TEM and UV-Vis-Near-IR. Results show that the obtained thin films are composed of orthorhombic phase Bi2S3 with good crystallinity. With the increase in the hydrothermal temperature, the crystallinity of the obtained films gradually improves then decreases. The best hydrothermal temperature is 130 ℃. Compared with the band gap for Bi2S3 thin film by electrodeposition method, the band gap of the Bi2S3 thin film obtained from microwave-hydrothermal assisted electrodeposition method raises from 1.44 to 1.84 eV.
出处
《无机化学学报》
SCIE
CAS
CSCD
北大核心
2010年第6期977-981,共5页
Chinese Journal of Inorganic Chemistry
基金
国家自然科学基金(No.50942047)
陕西科技大学研究生创新基金资助项目
关键词
BI2S3
薄膜
电沉积
微波水热
Bi2S3
thin films
electrodeposition
microwave-hydrothermal
