摘要
Se量是影响CIGS薄膜生长的重要因素之一。本实验利用三步共蒸法在不同Se量常温下沉积CIGS薄膜,而后对衬底分三步在不同温度下真空退火,采用扫描电子显微镜(SEM)和能量散射谱(EDS)观察和分析了薄膜的表面形貌和元素成分,采用X射线衍射仪(XRD)表征了薄膜的组织结构,采用紫外可见分光光度计(UV)研究了薄膜的光学性质,结果表明真空退火下Se量应严格控制在CuIn0.7Ga0.3Se2化学计量比范围内,这样有利于制备出较高吸收率的CIGS薄膜。
Se content is an important factor in the preparation of Cu（In,Ga）Se_2（CIGS）thin films.CIGS thin films were deposited with different Se contents by three stage co-evaporation at room temperature,and then were annealed in vacuum at each step.CIGS films were characterized with X-ray diffractometry（XRD）,scanning electron microscopy（SEM）,X-ray energy-dispersive spectroscopy（EDS）and ultraviolet spectrophotometry（UV）to study the microstructures,surface morphologies and optical properties,respectively.The results show that Se content must be within the scope of CuIn_ 0.7 Ga_ 0.3 Se_2 stoichiometry,which is conducive to the preparation of CIGS thin films with high absorption rate.
出处
《材料科学与工程学报》
CAS
CSCD
北大核心
2010年第3期408-411,共4页
Journal of Materials Science and Engineering
基金
攀枝花学院博士基金资助项目(114044)
关键词
CIGS薄膜
Se量
真空退火
晶体结构
光学性质
CIGS thin films
Se content
vacuum annealing
crystal structure
optical properties
