退火温度对Bi_4Ti_3O_(12)_Bi_3TiNbO_9复合薄膜铁电性能的影响

Effect of Annealing Temperature on the Property of Bi_4Ti_3O_(12)_Bi_3TiNbO_9 Ferroelectric Thin Films

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摘要研究了退火工艺对溶胶-凝胶法Bi4Ti3O12_Bi3TiNbO9复合薄膜铁电性能的影响。结果表明,采用溶胶-凝胶工艺制备Bi4Ti3O12_Bi3TiNbO9复合薄膜,可将薄膜的剩余极化值Pr提高到19.8μC/cm2(而Bi4Ti3O12薄膜的Pr只有15μC/cm2);薄膜在650℃退火可获得最佳的铁电性能。 The effect of annealing temperature on the ferroelectric property of Bi4Ti3O12-Bi3TiNbO9ferroelectric thin films prepared by sol-gel was investigated. The results show that the remnant polarization of BIT-BNT ferroelectric thin films was increased to 19.8μC/cm2 and the best ferroelectric property was obtained at 650 ℃ annealing temperature.

作者李健王华许积文任明放杨玲

机构地区桂林电子科技大学材料科学与工程学院

出处《电工材料》 CAS 2010年第2期28-31,共4页 Electrical Engineering Materials

关键词 Bi4Ti3O12-Bi3TiNbO9( BIT-BNT) 薄膜铁电性能退火温度 Bi4Ti3O12-Bi3TiNbO9（BIT-BNT） thin film ferroelectric property annealing temperature

分类号 TQ320.721 [化学工程—合成树脂塑料工业] TM205.1 [一般工业技术—材料科学与工程]

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退火温度对Bi_4Ti_3O_(12)_Bi_3TiNbO_9复合薄膜铁电性能的影响

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