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La/Nb掺杂对Bi_4Ti_3O_(12)薄膜铁电性能和疲劳特性的影响

EFFECTS OF La/Nb DOPING ON FERROELECTRIC PROPERTIES AND FATIGUE CHARACTERS OF Bi_4Ti_3O_(12) THIN FILMS
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摘要 采用溶胶–凝胶工艺(sol–gel)在Pt/Ti/SiO2/p-Si衬底上分别制备Bi4–xLaxTi3O12和Bi4Ti3–yNbyO12铁电薄膜,研究La/Nb掺杂对Bi4Ti3O12薄膜铁电性能和疲劳特性的影响。结果表明:La/Nb掺杂均能有效改善Bi4Ti3O12薄膜的铁电性能和疲劳特性。当La摩尔(下同)掺量在0.5~0.75时,La掺杂对Bi4Ti3O12薄膜的性能改善作用最好,而且在明显提高薄膜铁电性能的同时,对薄膜疲劳特性的改善更加显著,薄膜经1010极化反转后,其剩余极化强度(Pr)仅下降5.1%。Nb掺杂对提高薄膜铁电性能的作用更加明显,Nb掺量为0.06时,Bi4Ti3–yNbyO12薄膜的Pr高达18.7μC/cm2,但Nb掺量不宜过多,当Nb掺量超过0.06以后,薄膜的铁电性能和疲劳特性均反而有所下降。 The Bi4–xLaxTi3O12 and Bi4Ti3–yNbyO12 ferroelectric thin films were fabricated on Pt/Ti/SiO2/p-Si substrates by the solgel technique. Effects of La/Nb doping on ferroelectric properties of Bi4Ti3O12 thin films were investigated. Improvements of the ferro-electric properties and fatigue characters of Bi4Ti3O12 thin films by La/Nb doping were obtained. When the doping mole (the same below) contents of La vary from 0.5 to 0.75,Bi4–xLaxTi3O12 thin films exhibit good ferroelectric properties and fatigue characters with a decrease of 5.1% in remanent polarization after 1010 switching. The Bi4Ti3–yNbyO12 thin films had better ferroelectric properties with a remanent polarization of 18.7 μC/cm2 when Nb doping content is 0.06,while an excessive Nb doping lead to bad ferroelectric properties and fatigue characters.
作者 冯湘 王华
出处 《硅酸盐学报》 EI CAS CSCD 北大核心 2010年第6期1026-1030,共5页 Journal of The Chinese Ceramic Society
基金 教育部科学技术研究重点(208109) 广西自然科学基金(桂科自0832247)资助项目
关键词 铁电薄膜 钛酸铋 镧掺杂 铌掺杂 铁电性能 疲劳特性 ferroelectric thin films bismuth titanate lanthanum doping niobium doping ferroelectric properties fatigue characters
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