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手机近场辐射对人脑影响的有限元分析

Finite Element Analysis of Effects of the Radiation of Mobile Phone on Human Brain
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摘要 根据人脑的核磁共振影像(MRI)以及人脑组织数据,采用多物理量有限元模拟的方法进行建模,计算了人脑在手机近场辐射情况下的比吸收率(SAR)和局部温升的特性,并就辐射对人脑的影响问题进行了探讨。模拟结果符合相关国际标准规定,模拟数据合理。 Based on the magnetic resonance image(MRI) and the relative date of human brain tisue,a model was established by the multi-physics finite element simulation method.The specific Absorption rate(SAR)and local temperature raise character of brain under the near-field radiation of mobile phone was charactered,and the influence of radiation on human brains was discussed.And the modeling results agree with the international standard with reasonable modeling data.
出处 《太原科技大学学报》 2010年第3期218-221,共4页 Journal of Taiyuan University of Science and Technology
关键词 手机辐射 比吸收率(SAR) 脑部温升 mobile phone radiation specific Absorption rate(SAR) brain temperature rise
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参考文献10

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