期刊文献+

透射式GaAs光电阴极研究 被引量:4

Investigation on Transmission Mode GaAs Photocathode
下载PDF
导出
摘要 介绍了透射式GaAs光电阴极部件的制作技术和Cs、O激活机理;对Cs、O激活的GaAs光电阴极测试结果进行了分析,并指出了存在的问题和原因;讨论了提高GaAs光电阴极灵敏度的重要途径;提出了GaAs光电阴极灵敏度提高的技术方法以及进一步研究的方向。 The transmission GaAs photocathode fabrication technique and the mechanism of the Cs-O activation for the GaAs are introduced. The experimental results of the GaAs photo- cathode with Cs-O activation has been analyzed, some existing problems and the reasons are pointed out after the analysis. The important way of how to increase the GaAs photocathode pho to-electric sensitivity is discussed. The technique methods of increasing the GaAs photocathode sensitivity is concluded in detail and also the further research direction is put forward.
作者 马建一 孙键
出处 《光电子技术》 CAS 北大核心 2010年第2期76-79,共4页 Optoelectronic Technology
关键词 透射式GaAs阴极 铯氧激活 光电灵敏度 热清洗 光谱响应曲线 transmission GaAs photocathode Cs-O activation ptioto-electric sensitivity heat cleaning spectral response curve
  • 相关文献

参考文献7

二级参考文献52

  • 1杜晓晴,宗志园,常本康.GaAs光电阴极稳定性的光谱响应测试与分析[J].光子学报,2004,33(8):939-941. 被引量:9
  • 2杜玉杰,杜晓晴,常本康,钱芸生.激活台内透射式GaAs光电阴极的光谱响应特性研究[J].光子学报,2005,34(12):1792-1794. 被引量:14
  • 3[1]Kolac U,Donath M,Ertl K et al.High-performance GaAs polarized electron source for use in inverse photoemission spectroscopy,Rev Sci Instrum,1988,59(9):1933~1940
  • 4[2]Elamrawiand K A,Elsayed-Ali H E.Preparation and operation of hydrogen cleaned GaAs(100) negative electron affinity photocathodes,J Vac Sci Technol,A,1999,17(3):823~831
  • 5[3]Gutierrez W A,Pommerrenig H D.High-sensitivity transmission-mode GaAs photocathode,Applied Physics Letters,1973,22(6):292~293
  • 6[4]Besancon M,Landers R,Jupille J.Summary abstract:X-ray photoelectron spectroscopy,ultraviolet photoelectron spectroscopy,and Auger electron spectroscopy study of (Cs-O) activated GaAs(100) surfaces,J Vac Sci Technol,1987,A5(4):2025~2027
  • 7[5]Liu Y Z,Moll J L,Spicer W E.Effects of heat cleaning on the photoemission properties of GaAs,Applied Physics Letters,1969,14(9):275~277
  • 8[6]Rodway D C,Allenson M B.In situ surface study of the activating layer on GaAs(Cs,O) photocathodes,J Phys D:Appl Phys,1986,19:1353~1371
  • 9[7]Uebbing J J.Use of auger electron spectroscopy in determining the effect of carbon and other surface contaminants on GaAs-Cs-O photocathodes,Journal of Applied Physics,1970,41(2):802~804
  • 10[8]James L W,Antypas G A,Edgecumbe J et al.Dependence on crystalline face of the band bending in Cs2O-activated GaAs,Journal of Applied Physics,1971,42(12):4976~4980

共引文献9

同被引文献34

引证文献4

二级引证文献6

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部