离子通道门控动力学研究

Studies on Gating Dynamics of Ion Channel

报道作者近期在离子通道动力学方面所作的研究工作。以膜片钳记录信号的自相关函数为基础，证实了离子通道记忆性的存在，并提出两状态非线性随机模型和镶嵌点过程模型，用于描述记忆性和门控动力学的特征，这样做可以克服Ｍａｒｋｏｖ模型和分形模型所遇到的３项困难，即状态不可辨认性、开关判定的主观性和时间间隔疏漏。另外，作者还提出了连续分组平均时间检测法，帮助确定Ｍａｒｋｏｖ模型中状态的个数，与多指数拟合法相比。

The authors recent works on gating dynamics of ion channel were summarized in this paper. Base on the autocorrelation function of Patch Clamp recording, the existence of memory in ion channels was confirmed, and two state nonlinear stochastic process models and embedded point processes models were proposed to describe the characteristcs of memory and gating dynamics. As a result, three difficult problems of state unidentifiability, subjectivity in defining open and close and time interval omission met by the Markov models and fractal models can be overcome. In addition, the method of mean open durations of consecutive groups was proposed to determine the number of states for Markov models which is more intuitive and easier to operate, compared with the method of multi exponential components.