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GaN HFET中的耦合沟道阱

A Coupled Quantum Wells in GaN HFET
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摘要 从自洽求解薛定谔方程和泊松方程出发研究了GaN异质结构中的耦合沟道阱,求出了耦合沟道阱中电子状态随异质结构的变化,发现通过适当的能带剪裁可以使基态子带和激发态子带分别落在主阱和副阱中,从而显著降低了子带间的散射。使用这种新颖的耦合沟道阱完成了低噪声HFET的优化设计。 The coupled quantum wells in GaN heterostructure are researched from the self-consistent solution of Schrodinger equation and Poisson equation. The variation of electron states in quantum well with heterostructure is investigated.It is found that the fundamental subband and excited subbands may be separated in host well and auxiliary well respectively through appropriate band tailoring,from which the scattering among subbands is reduced remarkably.The heterostructure for GaN HFET with low noise is optimized by using the novel coupled quantum well.
作者 薛舫时
机构地区 单片集成电路与模块国家级重点实验室
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 2010年第2期169-173,共5页 Research & Progress of SSE
基金 创新基金资助项目(JJ0901)
关键词 耦合沟道阱 能带剪裁 子带间散射 低噪声氮化镓异质结场效应管 优化设计 coupled quantum well band tailoring scattering among subbands low noise GaN HFET optimized design
分类号 TN386 [电子电信—物理电子学]
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参考文献9

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二级参考文献11

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固体电子学研究与进展
2010年 第2期

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