摘要
利用非平衡格林函数法处理开放边界条件的薛定谔方程,与泊松方程自洽求解,在实空间实现了对纳米量级双栅MOS器件的二维量子模拟。与模空间法的仿真效率及模拟结果进行了比较,对栅极漏电流受栅介质、栅与源漏交叠、栅氧层厚度的影响进行了研究。
A two-dimensional quantum model of nanoscale double gate（DG） MOSFET is implemented in real space.The Schrodinger equation is solved self-consistently with Poisson′s equation by using non-equilibrium Green′s method（NEGF） to treat the open boundary conditions.In addition to the comparison of the simulation efficiency and results with mode space method,the dependence of gate leakage current on high k material,source/drain gate overlap and oxide thickness is examined.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2010年第2期174-179,共6页
Research & Progress of SSE
基金
国家杰出青年科学基金项目(60788402)
