CMOS宽带可编程增益低噪声放大器

CMOS Wide Band Programmable Gain Low Noise Amplifier

给出了一种可应用于中国移动多媒体广播（CMMB）调谐器的宽带（470~860 MHz）可编程增益低噪声放大器。该电路在UMC 0.18μm RF CMOS工艺下实现,芯片面积为0.37 mm2（不包括ESD pad）。芯片测试结果表明,在1.8 V的电源电压下功耗为30.2 mW,该电路可实现-6.8~32.4 dB的增益动态变化范围,0.5 dB步长,最高增益下单端信号噪声系数小于3.8 dB。

This paper proposes a wide band（470～860 MHz） programmable gain low noise amplifier（LNA） for China Mobile Multimedia Broadcasting（CMMB） tuner.This circuit is fabricated in UMC 0.18 μm RF CMOS technology with the chip area of 0.37 mm2（excluding ESD pads） and consumes 30.2 mW from 1.8 V power supply.The circuit realizes gain dynamic range from-6.8 dB to 32.4 dB which could be fine tuned by 0.5 dB per step.Noise figure（NF） of single ended signal is below 3.8 dB at highest gain.