600 V-30 A 4H-SiC肖特基二极管作为IGBT续流二极管的研究

600 V-30 A 4H-SiC SBD Used as FreewheelingDiode for IGBT Module

采用碳化硅外延和器件工艺制造了碳化硅肖特基(SBD)二极管,耐压超过600 V。正向压降为1.6 V时,器件电流达到30A。作为IGBT续流二极管,600 V碳化硅肖特基二极管和国际整流器公司的600 V超快恢复二极管(Ultra fast diode)进行了对比:125℃IGBT模块动态开关测试中,碳化硅二极管的反向恢复能耗比硅二极管节省90%,相应的IGBT开通能耗节省30%。另外反向恢复中过电压从40%降为10%,这是由于碳化硅的软度高,提高了模块的可靠性。

The 600 V 4H-SiC Schottky Barrier Diode（SBD） was designed and fabricated based on in-house SiC epitaxy and device technology.The SiC SBD was packaged together with total current of 30 A and forward voltage drop of 1.6 V.As a free-wheeling diode for the Si IGBT（switching measurements were done at 125℃）,the 600 V SiC SBD was compared to the 600 V ultra-fast diode from International Rectifier Co..The SiC diode achieved 90% recovery loss reduction the and corresponding IGBT showed 30% lower turn-on loss.Also the voltage spike was reduced from 40% to 10% due to high softness of the SiC SBD.