Sb掺杂量对ATO半导体颜料涂层光学性能的影响

Effects of Sb Doped Concentration on Coating Optical Property of ATO Semiconductor Pigments

采用共沉淀法合成了ATO半导体颜料的前驱体,前驱体经过烧结获得半导体颜料,通过XRD、SEM、EDS等手段对颜料进行表征,研究了Sb掺杂量对ATO半导体颜料粉体电阻率和涂层光学性能的影响。研究结果表明,Sb掺杂量对颜料的粉体电阻率和涂层光学性能影响明显,当Sb掺杂量为6%(质量分数)时,制备的颜料粉体电阻率为15.4Ω.cm,涂层红外发射率仅为0.71。

ATO semiconductor pigment precursors were synthesized by co-precipitation method,semiconductor pigments were obtained by sinter experiments.The structure,component and the surface morphology of the pigments prepared were characterized by X-ray diffraction,energy dispersive spectra and scanning electron microscope.The effect of Sb doped concentration on powder resistivity and coating optical property of the pigments were discussed.The results showed that Sb doped concentration plays an important role in powder resistivity and coating optical property,the powder resistivity is 15.4 Ωocm and the coating infrared emissivity is only 0.71 when the Sb doped concentration is 6 wt%.