一步电沉积法制备铜铟硫薄膜的研究

Research on CuInS_2 Thin Films Prepared by One-step Electrodeposition

本文采用一步电沉积法在ITO玻璃衬底上成功制备了不同Cu/In比的CuInS2(CIS)薄膜。采用扫描电子显微镜、能谱仪、X射线衍射和紫外-可见分光光度计对制备的薄膜进行了表征,并研究了Cu/In比对薄膜结晶性和光学性能的影响。研究表明:通过优化电解液成分、pH值和电沉积条件,可得到均匀致密、与衬底结合力强的CIS薄膜;Cu/In比的增大有助于提高退火后薄膜的结晶性能,增大晶粒尺寸;所制备的薄膜均为单一黄铜矿相,具有较好的光吸收性能,其禁带宽度约为1.47eV。

CIS thin films with different Cu/In ratio were prepared intentionally by one-step electrodeposition technique on ITO glass substrates,respectively.The thin films were characterized by scanning electron microscope （SEM）,energy-dispersive spectrometry （EDS）,X-ray diffraction （XRD） and ultraviolet-visible spectrophotometer.The influence of Cu/In ratio in precursors on crystalline and optical property of the films was discussed.The results reveal that as-deposited Cu-In-S films with different Cu/In ratio obtained by the optimized parameter of the solution composition pH and the deposition conditions,have smooth,compact,crack-free surface and adhere to substrates.Annealing treatment can improve crystalline of the CIS thin films.The size of average grains increases with the Cu/In ratio of the as-deposited films.Annealed films with a band gap of about 1.47 eV are chalcopyrite phase and have preferably optical property.