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SrRuO_3导电层对快速退火制备Pb(Zr,Ti)O_3薄膜结构和性能的影响 被引量：6

Effect of SrRuO_3 Conductive Layer on the Structure and Properties of Pb(Zr,Ti)O_3 Thin Films Prepared by Rapid Thermal Annealing
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摘要 采用溶胶-凝胶法在Pt/Ti/SiO2/Si基片上,制备了Pt/Pb(Zr,Ti)O3(PZT)/Pt和SrRuO3(SRO)/PZT/SrRuO3(SRO)异质结电容器,并研究了快速退火条件下SRO导电层对PZT结构和性能的影响。XRD测试表明,两种结构电容器中的PZT薄膜均为钙钛矿结构,SRO/PZT/SRO、Pt/PZT/Pt均具有较好的铁电性和脉宽依赖性,5V电压下两电容器的剩余极化强度Pr和矫顽电压Vc分别为28.3μC/cm2、1.2V和17.4μC/cm2、2.1V。在经过1010次翻转后,SRO/PZT/SRO铁电电容器疲劳特性相对于Pt/PZT/Pt电容器有了较大的改善,但SRO导电层的引入也带来了漏电流增大的问题。 Ferroelectric Pb（Zr,Ti）O3 （PZT） heterostructures were fabricated on Pt/Ti/SiO2/Si substrates by Sol-gel method with or without SrRuO3（SRO） conductive layer.Influences of SRO conductive layer prepared by rapid thermal annealing on the structure and physical properties of PZT films were studied by X-ray diffraction （XRD） and ferroelectric tester （Precision LC unit）.X-ray diffractions show that the PZT thin films with or without SRO conductive layer are perovskite structure.Pr and Vc of SRO/PZT/SRO and Pt/PZT/Pt capacitors,measured at 5 V,are 28.3 μC/cm2,1.2 V and 17.4 μC/cm2,2.1 V,respectively.Both of the two kinds of PZT capacitors have shown good pulse width-dependent properties.The fatigue behavior of SRO/PZT/SRO heterostructure is improved while the Pt/PZT/Pt heterostructure fatigues seriously up to 1010 switching cycles.But the leakage current increases because of the introduction of the SRO conductive layer.
作者 王宽冒 刘保亭 倪志宏 赵敬伟 李丽 李曼 周阳
机构地区 河北大学物理科学与技术学院 河北大学计算中心
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2010年第3期608-612,627,共6页 Journal of Synthetic Crystals
基金 国家自然科学基金(No.60876055) 河北省自然科学基金项目(E2008000620) 教育部科学技术研究重点项目(No.207013) 河北省应用基础研究计划重点基础研究项目(08965124D)
关键词 钌酸锶 锆钛酸铅 快速退火 SrRuO3 Pb（Zr Ti）O_3 rapid thermal annealing
分类号 O484 [理学—固体物理]
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参考文献20

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共引文献19

同被引文献73

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二级引证文献9

人工晶体学报
2010年 第3期

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