摘要
采用溶胶-凝胶法在Pt/Ti/SiO2/Si基片上,制备了Pt/Pb(Zr,Ti)O3(PZT)/Pt和SrRuO3(SRO)/PZT/SrRuO3(SRO)异质结电容器,并研究了快速退火条件下SRO导电层对PZT结构和性能的影响。XRD测试表明,两种结构电容器中的PZT薄膜均为钙钛矿结构,SRO/PZT/SRO、Pt/PZT/Pt均具有较好的铁电性和脉宽依赖性,5V电压下两电容器的剩余极化强度Pr和矫顽电压Vc分别为28.3μC/cm2、1.2V和17.4μC/cm2、2.1V。在经过1010次翻转后,SRO/PZT/SRO铁电电容器疲劳特性相对于Pt/PZT/Pt电容器有了较大的改善,但SRO导电层的引入也带来了漏电流增大的问题。
Ferroelectric Pb(Zr,Ti)O3 (PZT) heterostructures were fabricated on Pt/Ti/SiO2/Si substrates by Sol-gel method with or without SrRuO3(SRO) conductive layer.Influences of SRO conductive layer prepared by rapid thermal annealing on the structure and physical properties of PZT films were studied by X-ray diffraction (XRD) and ferroelectric tester (Precision LC unit).X-ray diffractions show that the PZT thin films with or without SRO conductive layer are perovskite structure.Pr and Vc of SRO/PZT/SRO and Pt/PZT/Pt capacitors,measured at 5 V,are 28.3 μC/cm2,1.2 V and 17.4 μC/cm2,2.1 V,respectively.Both of the two kinds of PZT capacitors have shown good pulse width-dependent properties.The fatigue behavior of SRO/PZT/SRO heterostructure is improved while the Pt/PZT/Pt heterostructure fatigues seriously up to 1010 switching cycles.But the leakage current increases because of the introduction of the SRO conductive layer.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2010年第3期608-612,627,共6页
Journal of Synthetic Crystals
基金
国家自然科学基金(No.60876055)
河北省自然科学基金项目(E2008000620)
教育部科学技术研究重点项目(No.207013)
河北省应用基础研究计划重点基础研究项目(08965124D)
关键词
钌酸锶
锆钛酸铅
快速退火
SrRuO3
Pb(Zr
Ti)O_3
rapid thermal annealing