不同缓冲层对ZnO薄膜的性能影响

Effect of Different Buffer Layers on the Properties of ZnO Films

用射频反应磁控溅射法在玻璃基底上分别以SnO2、SiO2和Al2O3为缓冲层制备ZnO薄膜。利用X射线衍射仪(XRD)、扫描电镜(SEM)、紫外-可见分光光度计和荧光分光光度计对薄膜的结构和光学性能进行了表征。XRD和SEM的分析结果表明,在SiO2和Al2O3缓冲层上生长的ZnO薄膜具有较好的c轴择优取向,薄膜表面光滑平整,薄膜的结晶质量得到改善;透射光谱表明所有样品在可见光范围内的平均透过率超过70%;通过对薄膜光致发光谱的分析,认为422nm左右的紫峰来自于电子从晶粒边界的界面缺陷能级到价带的辐射跃迁;PL谱中蓝光和绿光的发光机制与薄膜中的本征缺陷有关。

ZnO films with SnO2,SiO2 and Al2O3 buffer layers were prepared on glass substrates by radio frequency magnetron sputtering method.The structure and optical properties of the ZnO films were characterized by XRD,SEM,UV-VIS spectrophotometer and fluorescence spectrophotometer.The results indicated that SiO2 and Al2O3 buffer layers with c axis preffered orientation have a smooth surface and the crystal quality of ZnO films improve.All samples show the average visible light transmittance above 70%.The violet luminescence peak at 422 nm is probably due to electron transition between interface defects level and the valence band,the luminescent mechanism of blue and green emission are related to intrinsic defects in films.