SiC晶体的PVT生长系统及测温盲孔对热场的影响

Influence of Pyrometric Blind Hole on the Thermal Field of SiC Crystal Growth System by PVT Method

实验中研究了不同结构参数的测温盲孔对晶体生长面热场的影响,结果分析表明:径向温度梯度和轴向温度梯度与测温盲孔的深度和半径近似成正比关系,但测温盲孔尺寸变化对径向温度梯度和轴向温度梯度的影响效果不同;改变测温盲孔尺寸适于调节径向温度梯度;测温盲孔半径和深度的增加均可导致坩埚盖上SiC多晶生长速率提高。

The effects of pyrometric blind hole with different Structural parameters on the thermal field of SiC crystal growth surface have been studied.The results of simulation indicate that the radial temperature gradient and the axial temperature gradient are approximately proportional to the depth and radius of pyrometric blind hole while influence of pyrometric blind hole size on the radial temperature gradient and the axial temperature gradient is different;Changes in pyrometric blind hole size is more suitable for regulation of the radial temperature gradient;In addition,the growth rate of poly-SiC around SiC monocrystalline has increased with the increase in the radius and depth of pyrometric blind hole increase.