摘要
用光电化学方法现场测量铜电极的开路光电压,用开路光电压的变化来反映铜的腐蚀行为及缓蚀剂BTA的缓蚀行为。实验发现开路光电压由正变负即光响应由P型光响应转变为N型光响应表明铜电极受到Cl-的侵蚀,在铜板电极表面形成了含有CuCl在内的复杂相。在本文条件下从w(缓蚀剂BTA)为5×10-6%时开始产生缓蚀作用,随着w(缓蚀剂)的增加,CuBTA膜变得越致密越厚,缓蚀作用越好,表现为开路光电压越来越小。
The open circuit photovoltage of Cu electrode was measured by photoelectrochemical method and the corrosion behavior of Cu and the inhibiting action of BTA were reflected by the change of open circuit photovotage. In the experiments,it was found that the open circuit photovoltage changes from positive to nagative,i.e,photoresponse changes from the P type to the N type,indicating that Cu electrode is corroded with Cl - and the complex film containing CuCl is formed on the surface of Cu electrode. When BTA concentration is higher than 5×10 -6 %. BTA begins to show the corrsion inhibiting action. With increasing the BTA concentration,the thickness of the complex film containing Cu and BTA and thus the corrosion inhibiting action of BTA are increased. The above results were demonstrated with the measurements of open circuit photovoltage and Auger electronic spectroscopy.
出处
《河北科技大学学报》
CAS
1999年第1期25-28,共4页
Journal of Hebei University of Science and Technology