摘要
报道了芯片尺寸为500μm×500μm硅衬底GaN基蓝光LED在常温下经1000h加速老化后的电学和发光性能,其光功率随老化时间的变化分先升后降两个阶段;老化后的反向漏电流和正向小电压下的电流均有明显的增加;老化后器件的外量子效率(EQE)比老化前低;老化前后EQE衰减幅度在不同的注入电流下存在明显差异,衰减幅度最小处出现在发光效率最高时对应的电流密度区间。
The electrical and optical aging characteristics of GaN-based light-emitting diodes on Si substrate were studied.The LED samples were stressed at room temperature with an injection current of 200 mA.Lightoutput power increases in the first stage and decreases with aging time.The current-voltage characteristics were also analyzed.Reverse current and forward current at low bias were increased significantly.The external quantum efficiency（EQE） of device after aging is lower than the pre-aging one.The EQE attenuation before and after aging are significantly different at different injection currents.The smallest attenuation occurs in the current density range corresponding to the highest efficiency.
出处
《发光学报》
EI
CAS
CSCD
北大核心
2010年第3期364-368,共5页
Chinese Journal of Luminescence
基金
国家"863"计划(2003AA302160
2005AA311010)资助项目
关键词
硅衬底
GAN
蓝光LED
老化
光衰
Si substrate
GaN
blue LED
aging test
luminous decay
