条形叉指n阱和p衬底结的硅LED设计及分析

Design and Analysis of a Forked n-Well and p-Sub Junction Si LED Based on Standard CMOS Technology

采用0.35μm双栅标准CMOS工艺最新设计和制备了叉指型SiLED发光器件。器件结构采用n阱和p衬底结,n阱为叉指结构,嵌入到p衬底中而结合成Sipn结LED。观察了SiLED发光显微图形及实际器件的版图,并在对器件进行了正、反向I-V特性测试、光功率及光谱特性的测量。SiLED的正向偏置时开启电压为0.9V,反向偏置时在15V左右可观察到发光。器件在室温下反向偏置时,10V,100mA电流下所得输出光功率为12.6nW,发光峰值在758nm处。

As the surprising development of fiber telecommunication and microelectronics technology,optoelectronic integrated circuit（OEIC） has becomes the focus of advanced research in the world recently.At present,there have been many new technologies that are applied to silicon-based light emission,such as porous silicon,nano crystals,SiGe,and so on,because Si material is low cost and the manufacture technology is mature.However,these techniques realize optical interconnection difficultly,which can not be compatible with the mature very large scale integrated circuits（VLSI） technology.One of the key works is to realize a practical light source to satisfy the requirement of optical interconnection.To obtain a Si LED（light-emitting diode） which can transmit optical signal in a chip,it was considered to improve the light intense and decrease cost by using new manufacture technology.In this paper,a forked type of Si LED is designed and manufactured with Singapore Charter＇s 0.35 μm double-grid standard CMOS technology.The device structure adopts n-well and p-sub junction,which n-well is a forked type and is embedded in p-sub.The idea of layout design is to achieve even light of Si LED,because the contact area of n-well and p-sub is large,and the electric field is symmetrical and uniform.At room temperature,the Si LED is reverse biased.The Si LED＇s emitting micrographs and real layouts are captured by an Olympus IC microscope,and the I-V characteristics and emission spectra of Si LED are presented.With forward bias,the threshold voltage is 0.9 V.And the Si LED can emit an visible light when the reverse bias is 15 V.Its radiant intensity is 10 nW at 50 mA current and the emitting peak value is located at 758 nm.As it is known,Si is an indirect band gap material,the emission intense of Si LED would be low.But the emission of our Si LED can meet the detect requirement of Si detectors.