摘要
采用固相法制备Sc2O3掺杂ZnO压敏瓷,通过扫描电镜对其显微组织进行了分析,探讨了Sc2O3对氧化锌压敏瓷电性能和显微组织影响机理。Sc2O3掺杂氧化锌压敏瓷1 000℃烧结的性能较好;当Sc2O3掺杂量掺杂浓度(摩尔分数)为0.3%时氧化锌压敏瓷的综合电性能最好,其压敏电位梯度为821 V/mm,非线性系数为62,漏电流为0.16μA。
Sc2O3-doped ZnO-Bi2O3-based varistor ceramics were prepared by using a solid reaction route, microstrueture was analyzed by scanning electron microscope and the electrical properties and microstructure influence mechanism of the varistor ceramics were studied. The sintering performance Sc2O3-doped zinc oxide varistor ceramics sintered at 1 000 ℃ was better; when doping concentration of was Sc2O3 0.3%, comprehensive electrical properties of, ZnO- varistor ceramics was best, such as the varistor electric potential gradient was 821 V/mm, the nonlinear coefficient was 62 and the leakage current was 0.16 μA.
出处
《电瓷避雷器》
CAS
北大核心
2010年第3期23-26,共4页
Insulators and Surge Arresters
基金
上海市科委技术创新人才团队建设专项项目(编号:06DZ05902)
关键词
压敏电阻
氧化锌
稀土
电性能
显微组织
varistors
zinc oxide
rare earth
electrical properties
microstructure
