氨化Ga_2O_3/Pd/Sapphire薄膜制备GaN纳米线

Synthesis of gallium nitride nanowires by ammoniating Ga_2O_3/Pd/sapphire films

利用金属元素钯作催化剂,采用磁控溅射后氨化法,成功的在Sapphire衬底上制备出GaN纳米线。X射线衍射和X射线光电子能谱研究显示合成的纳米线具有六方纤锌矿GaN结构。通过扫描电子显微镜,透射电子显微镜和高分辨透射电子显微镜观察分析得出GaN纳米线为单晶结构,其纳米线的直径约为10～60nm,长度达几十个微米。室温下以325nm波长的光激发样品表面,发现GaN带边发光峰有较弱的蓝移。最后简单讨论了GaN纳米线的生长机制。

GaN nanowires had been synthesized by ammoniating technique under flowing ammonia atmosphere on sapphire substrate with Pd catalysis.Studies by using X-ray diffraction and X-ray photoelectron spectroscopy indicate that the nanowires were hexagonal GaN.Observations by using scanning electron microscopy,transmission electron microscopy and high-resolution transmission electron microscopy show that GaN is single-crystal structure.The diameter of the nanowires is in the range of 10-60nm with the lengths up to several tens of micrometers.Photoluminescence spectrum shows a weakly blue-shift comparison to bulk GaN.Finally,the growth mechanism of GaN nanowires is also discussed.