高压合成含硼金刚石及电化学性能机理分析

B-doped Diamond Synthesized under High Pressure and Its Electrochemistry Properties

含硼金刚石不仅具有金刚石的优异的机械、物理化学性能,其导电性有大幅度提高,是很有发展潜力的功能材料。文章以H3BO3-石墨层间化合物(GICs)为碳源,高温高压合成含硼金刚石,利用XRF、SEM等方法分析了含硼金刚石的组成及形貌。以此含硼金刚石制备粉末微电极,测定循环伏安曲线及交流阻抗谱,分析电化学性能机理。

Boron doped diamond is a promising functional material due to its excellent physical and chemical properties including improving electric conductivity and good electrochemistry. In this paper, B-doped diamond were synthesized under high pressure and high temperature using B-doped graphite intercalation compositions （GICs） as carbon sources. B-doped GICs and synthetic diamond were investigated by X-ray diffraction, Infrared and Raman spectra, X-ray fluorescence analysis and scan electron microscope. The electrochemistry characteristic of B-doped diamond powder microelectrode were discussed by measuring the cyclic vohammetry curves and impedance spectrum.