摘要
We present a comparison between intracavity cooling and external cavity cooling for optical refrigeration. The results show that the intracavity scheme is preferred at low optical densities （〈 0.008）, while the external cavity scheme is preferred at higher optical densities （〉 0.01）. We can choose the proper scheme for different eases in experiments. Moreover, under the same conditions, taking Yb^3＋-doped ZBLAN （ZrF4-BaF2-LaF3-AlFa-NaF） film as an example, the cooling processes of the two scheme are obtained. The calculated results show that intracavity cooling will achieve a larger temperature drop for a thin film sample. Finally, the diode laser may become a candidate for the intraeavity model briefly discussed.
We present a comparison between intracavity cooling and external cavity cooling for optical refrigeration. The results show that the intracavity scheme is preferred at low optical densities （〈 0.008）, while the external cavity scheme is preferred at higher optical densities （〉 0.01）. We can choose the proper scheme for different eases in experiments. Moreover, under the same conditions, taking Yb^3＋-doped ZBLAN （ZrF4-BaF2-LaF3-AlFa-NaF） film as an example, the cooling processes of the two scheme are obtained. The calculated results show that intracavity cooling will achieve a larger temperature drop for a thin film sample. Finally, the diode laser may become a candidate for the intraeavity model briefly discussed.
基金
Supported by the National Natural Science Foundation of China under Grant No 10974055, the 2009 Shanghai Universities Selection and Train Outstanding Young Teachers in Special Funds for Scientific Research, and Shanghai Second Polytechnic University Fund （No QD209007）.
