摘要
A model for the effect of rapid thermal annealing on the formation of In-N clusters in strained GalnNAs is developed according to thermodynamics. In the model, the lowest annealing temperature influencing the redistribution of atoms is introduced. The average variation of energy for formation per In-N bond is obtained by fitting the experimental values. Using the present model, we calculate the average number of nearest-neighbor In atoms per N atom after annealing. The obtained results are compared with the experiment. The qualitative analysis and quantitative analysis are in good agreement with each other. The model is helpful to explain the essence of the blueshift caused by annealing.
A model for the effect of rapid thermal annealing on the formation of In-N clusters in strained GalnNAs is developed according to thermodynamics. In the model, the lowest annealing temperature influencing the redistribution of atoms is introduced. The average variation of energy for formation per In-N bond is obtained by fitting the experimental values. Using the present model, we calculate the average number of nearest-neighbor In atoms per N atom after annealing. The obtained results are compared with the experiment. The qualitative analysis and quantitative analysis are in good agreement with each other. The model is helpful to explain the essence of the blueshift caused by annealing.
基金
Supported by the National Basic Research Program of China under Grant No 2006CB6049, the National Natural Science Foundation of China under Grant Nos 60721063, 60676057, 60731160628, 60820106003, 60990311 and 60906025, The Nature Science Foundation of Jiangsu Province under Grant Nos BK2008019 and BK2009255, the Research Funds from NJU-Yangzhou Institute of Opto-electronics.
