直流磁控溅射工艺参数对β-FeSi_2薄膜性能的影响

Influence of DC-magnetron sputtering technology parameters on properties of β-FeSi_2 thin film

采用室温直流磁控溅射Fe-Si组合靶的方法,经过后续Ar气氛围退火,在单晶Si(111)衬底上生长β-FeSi2薄膜。研究了溅射功率、工作气压、Ar气流量、沉积时间等工艺参数对β-FeSi2薄膜结构特性及电学特性的影响,通过Raman、Hall、X射线衍射(XRD)等测试对其性能进行表征,对工艺参数进行了优化,在溅射功率为80W、工作气压为1.3Pa和Ar气流量为35SCCM时溅射沉积Fe-Si薄膜,不仅可以得到单一相的β-FeSi2,而且薄膜结晶质量较好。最终,在上述实验条件下制备得到的未掺杂的β-FeSi2薄膜是n型导电的,β-FeSi2薄膜中载流子浓度约为3.3×1016cm-3,迁移率为381cm2/Vs。

β-FeSi2 thin films were grown on Si（111） substrates at room temperature by DC-magnetron sputtering Fe-Si mixed targets and post-annealing.The influence of sputtering power,reacting gas pressure,Ar gas flow and deposition time on structural and electrical properties of β-FeSi2 materials were studied and characterized with Raman spectroscopy,Hall and X-ray Diffraction（XRD）.A group of optimized sputtering parameters were obtained：when sputtering power is 80 W,reacting gas pressure is 1.3 Pa and Ar gas flow is 35 SCCM,we can gain single phase β-FeSi2 thin films with good crystalline quality.The un-doped β-FeSi2 thin films obtained in this experiment are N-type,and the electron concentration is 3.3×1016 cm-3,the corresponding mobility is 381 cm2/Vs in the film.