摘要
目的研究一种新型的功率器件——绝缘栅双极型晶体管(IGBT)的静态模型。方法分析并建立IGBT的Pspice静态模型,分析模型的结构和参数的配置并对模型进行了仿真,将仿真出的转移特性和输出特性与实际器件进行了比较。结果/结论所建立的功率器件IGBT的静态模型是正确的,在对其器件或系统的仿真中具有较高的使用价值。
Aim To research a new power device that is a static simulation model of insulated gate bipolar transistor （IGBT）. Methods A static simulation model of IGBT is built and designed based on PSpice software. Besides analyzing the structure and parameter configurations of this model, the simulated transfer and output characteristics of the model are compared with actual device IRGB30B60K after simulating the model. Results/Conclusion The built static model of IGBT is not only accurate but also has a higher use value in IGBT device or system simulation.
出处
《宝鸡文理学院学报（自然科学版）》
CAS
2010年第2期65-67,73,共4页
Journal of Baoji University of Arts and Sciences(Natural Science Edition)
关键词
模型
IGBT
静态特性
model
IGBT
static characteristics
