摘要
为了对晶闸管特性进行计算机模拟,有必要对其P区的杂质浓度分布建立准确而便于计算的模型。文中对形成P区二段式杂质分布的铝镓分步闭管扩散工艺进行了讨论。对较低浓度铝的最终分布着重考虑它在扩镓过程中的再分布,而对高浓度镓的最终分布则着重考虑扩散系数的变化。与实验样品的扩展电阻探针测试数据进行比较后表明,本工作所用模型与实验结果有较好的吻合,适宜于在实际工艺过程中使用。
It is necessary to establish a precise and feasible modle to describe the impurity profiles in two p-layers of a thyristor for its numerical analysis. The author deal with the two-stage sealed tube diffusion process that forms the double diffused p-layers of a high power thyristor. The redistribution of Al in gallium diffusion process is particularly considered for diseribing its final profile, whereas a variable diffusion coefficient is employed to discribe Ga profile with higher surface concentration. Comparing the calculated results with the experimcnt data obtained by spreading probe measurement, we show that the model is practitally precise and feasible.
关键词
晶闸管
闭管
扩散工艺
计算机模拟
thyristor fabrication, process simulation, sealed tube diffusion, impurity protfile.
