摘要
样品经硝酸和氢氟酸混合酸分解后,采用电感耦合等离子体原子发射光谱(ICP-AES)法测定工业硅中痕量硼杂质元素。试验发现,控制加热温度在140~180℃,可以有效抑制硼元素的挥发。对分析谱线的选择进行探讨,选定B208.959nm{161}作为B的分析谱线,而且,适当的扣除背景点,基体和其它共存元素在实验条件下均未对B208.959nm{161}线产生光谱干扰现象。在仪器最佳工作条件下,方法检出限为0.03μg/mL,回收率在90%~105%,相对标准偏差≤7.0%(n=11)。用本方法测定工业硅标准样品中硼,测定值与认定值相吻合。
Trace boron in industrial silicon was determined by inductively coupled plasma atomic emission spectrometry (ICP-AES) after the sample was decomposed with HNO3-HF mixed acid. The results showed that the volatilization of boron could be effectively inhibited by controlling the heating temperature at 140-180 ℃. The analytical spectral lines were investigated, and B 208.9 nm{161}was selected. Moreover, by properly deducting the background under the experimental conditions, the matrix and other coexiting elements had no interference with the spectra of B 208.9 nm{161}. Under the optimal working conditions of instrument, the detection limit of method was 0.03 μg/mL and the recovery was 90 %-105 % with the relative standard deviation (RSD) of no more than 7.0 % (n=11). The proposed method has been applied to the determination of boron in industrial silicon certified reference materials, and the results were consistent with the certified values.
出处
《冶金分析》
CAS
CSCD
北大核心
2010年第6期37-40,共4页
Metallurgical Analysis
关键词
电感耦合等离子体原子发射光谱
工业硅
硼
inductively coupled plasma atomic emission spectrometry
industrial silicon
boron